IXFN70N120SK MOSFET MOD.68A 1200V N-CH SOT227B SILICON CARBIDE

IXFN70N120SK MOSFET MOD.68A 1200V N-CH SOT227B SILICON CARBIDE Description

IXFN70N120SK MOSFET MOD.68A 1200V N-CH SOT227B SILICON CARBIDE The IXFN70N120SK, manufactured by IXYS, is a high-performance module MOSFET designed for mosfet mod.68a 1200v n-ch sot227b silicon carbide. It provides excellent performance and reliability for high-power applications. The MOSFET supports a current rating of 68A and a voltage rating of 1.2kV, with a low on-resistance of 34m Ohms ensuring efficient operation. It can handle a power dissipation of up to N/A, making it ideal for demanding environments. The reverse recovery time is 30ns, allowing for fast switching. Operating within a temperature range of -40°C~+175°C, it offers robust performance across various conditions. As a rohs-compliant product, it meets strict environmental standards. Packaged in tube format, it ensures secure handling and storage. With its advanced features and durable design, the IXFN70N120SK is an excellent choice for professionals seeking high-quality module MOSFET solutions.

IXFN70N120SK MOSFET MOD.68A 1200V N-CH SOT227B SILICON CARBIDE Technical Specifications

• Manufacturer: IXYS
• MountingType: Chassis
• Package  /Case: SOT227B (Minibloc)
• Technology: SiC Power
• FetType: N-CH
• Current(25°C): 68A
• Voltage: 1.2kV
• RdsOn: 34m Ohms
• PowerDissipation:
• Trr: 30ns
• Configuration: Single
• Applications:
• OperatingTemperature: -40°C~+175°C
• Rohs: ROHS
• Packaging: TUBE

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